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Plasmochemical and Reactive Ion Etching of Gallium Arsenide in Difluorodichloromethane with Helium
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Plasmochemical and Reactive Ion Etching of Gallium Arsenide in Difluorodichloromethane with Helium
Annotation
PII
S0544126924040078-1
Publication type
Article
Status
Published
Authors
D. B. Murin 
Affiliation: Ivanovo State Chemical-Technological University
Edition
Volume 53 Issue number 4
Pages
346-352
Abstract
The kinetics of interaction of high-frequency plasma of difluorodichloromethane and its mixture with helium with the surface of gallium arsenide was experimentally studied. It was established that in the studied range of conditions, complete decomposition of the original difluorodichloromethane molecule to atomic carbon occurs. It has been confirmed that the main chemically active particles responsible for etching are reactive chlorine atoms. It has been shown that the etching process occurs in the mode of an ion-stimulated chemical reaction, where the desorption of products under the influence of ion bombardment plays a significant role in surface cleaning. The emission spectra of plasma radiation in the presence of a gallium arsenide semiconductor wafer are analyzed. Control lines and stripes were selected to control the speed of the etching process based on the emission intensity of the lines and stripes of the etching products.
Keywords
травление плазма кинетика интенсивности излучения арсенид галлия дифтордихлорметан гелий
Acknowledgment
The study was carried out using the resources of the Centre for Collective Use of Scientific Equipment of the Ivanovo State Chemical-Technological University (supported by the Ministry of Education and Science of Russia, Agreement No. 075-15-2021-671)
Received
12.11.2024
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References

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