- PII
- S0544126924040078-1
- DOI
- 10.31857/S0544126924040078
- Publication type
- Article
- Status
- Published
- Authors
- Volume/ Edition
- Volume 53 / Issue number 4
- Pages
- 346-352
- Abstract
- The kinetics of interaction of high-frequency plasma of difluorodichloromethane and its mixture with helium with the surface of gallium arsenide was experimentally studied. It was established that in the studied range of conditions, complete decomposition of the original difluorodichloromethane molecule to atomic carbon occurs. It has been confirmed that the main chemically active particles responsible for etching are reactive chlorine atoms. It has been shown that the etching process occurs in the mode of an ion-stimulated chemical reaction, where the desorption of products under the influence of ion bombardment plays a significant role in surface cleaning. The emission spectra of plasma radiation in the presence of a gallium arsenide semiconductor wafer are analyzed. Control lines and stripes were selected to control the speed of the etching process based on the emission intensity of the lines and stripes of the etching products.
- Keywords
- травление плазма кинетика интенсивности излучения арсенид галлия дифтордихлорметан гелий
- Date of publication
- 26.07.2025
- Number of purchasers
- 0
- Views
- 66
References
- 1. Данилин Б.С., Киреев В.Ю. Применение низкотемпературной плазмы для травления и очистки материалов. Москва: Энергоатомиздат, 1987. C. 264.
- 2. Дунаев А.В., Ситанов Д.В., Мурин Д.Б. Закономерности взаимодействия меди с хлорсодержащими газами // Химия высоких энергий. 2017. Т. 51. № 3. С. 239–243.
- 3. Franz G., Kelp A., Messerer P. Analysis of chlorine-containing plasmas applied in III/V semiconductor processing // J. Vac. Sci. Technol. 2000. V. 18. № 5. P. 2053–2061.
- 4. Ibbotson D.E. Plasma and gaseous etching of compounds of Groups III–V // Pure and Appl. Chem. 1988. V. 60. № 5. P. 703–708.
- 5. Ефремов А.М., Светцов В.И., Пивоваренок С.А., Дунаев А.В. Кинетика травления GaAs в хлорной плазме // Изв ВУЗов. Химия и хим. технология. 2010. Т. 53. Вып. 5. С. 53–56.
- 6. Grigonis A. The surface composition of GaAs affected by reactive plasma // Surf. Coat. Technol. 1998, V. 110. № 1–2. P. 31–34.
- 7. Ефремов А.М., Мурин Д.Б., Левенцов А.Е. Кинетика и режимы плазмохимического травления GaAs в условиях индукционного ВЧ разряда в CF2Cl2 // Микроэлектроника. 2014. Т. 43. № 6. С. 429–434.
- 8. Pearse R.W.B., Gaydon A.G. The identification of molecular spectra. Fourth edition. New York: John Wiley & Sons, inc. 1976. P. 407.
- 9. Стриганов А.Р., Свентицкий Н.С. Таблицы спектральных линий нейтральных и ионизированных атомов. Москва: Атомиздат., 1966. C. 899.
- 10. Wang Y. F., Lee W.J., Chen C.Y. Reaction Mechanisms in Both a CCl2F2/O2/Ar and a CCl2F2/H2/Ar RF Plasma Environment // Plasma Chem. and Plasma Proces. V. 20. No 4. 2000. P. 469–494.
- 11. Stoffels W. W., Stoffels E., Haverlag M. The chemistry of a CCl2F2 radio frequency discharge // J. Vac. Sci. Technol. A. V. 13. No 4. 1995. P. 2058–2066.
- 12. Glauco F. Bauerfeldt and Graciela Arbilla. Kinetic analysis of the chemical processes in the decomposition of gaseous dielectrics by a non-equilibrium plasma — Part 1: CF4 and CF4/O2// J. Braz. Chem. Soc. 2000. V. 11. No. 2. P. 121.
- 13. Efremov A. M., Kim D.P., Kim C.I. Effect of gas mixing ratio on gas-phase composition and etch rate in an inductively coupled CF4/Ar plasma // Vacuum. 2004. V. 75. № 2. P. 133–142.
- 14. Zhang D., Kushner M.J. Mechanisms for CF2 radical generation and loss on surfaces in fluorocarbon plasmas // Journal of Vacuum Science & Technology A.: Vacuum, Surfaces, and Films. 2000. V. 18. № 6. P. 2661–2668.
- 15. Пивоваренок С.А., Дунаев А.В., Мурин Д.Б. Кинетика взаимодействия высокочастотного разряда CCl2F2 с арсенидом галлия // Микроэлектроника. 2016. Т. 45. № 5. С. 374–378.