- PII
- S30345480S0544126925040024-1
- DOI
- 10.7868/S3034548025040024
- Publication type
- Article
- Status
- Published
- Authors
- Volume/ Edition
- Volume 54 / Issue number 4
- Pages
- 281-290
- Abstract
- The development of national resists for electron-beam and ion-beam lithography processes is reviewed. Positive resists based on polymethyl methacrylate allow to create nanoscale structures. Moreover, the possibility of using a combination of the created resists as bilayer resist is demonstrated. The perspectives of the development of national processes of electron-beam and ion-beam lithography are also demonstrated. At the present moment own national technological processes of electron-beam and ion-beam lithography are at the stage of demonstrators. In the near future, national electron-beam and ion-beam lithography devices will be developed. It will take significantly more time to organize production of national ion-beam lithography equipment.
- Keywords
- электроннолучевая литография ионнолучевая литография резист полиметилметакрилат
- Date of publication
- 15.05.2025
- Year of publication
- 2025
- Number of purchasers
- 0
- Views
- 86
References
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