- PII
- S0544126925030044-1
- DOI
- 10.31857/S0544126925030044
- Publication type
- Article
- Status
- Published
- Authors
- Volume/ Edition
- Volume 54 / Issue number 3
- Pages
- 224-231
- Abstract
- A self-consistent model describing the break/restoration of a conducting channel-filament in a memristor cell based on the transport of oxygen vacancies in transition metal oxides is build. The stabilization of the memristor cell conductivity during initial switching from a low-resistance state to a high-resistance state and back is studied.
- Keywords
- мемристор филамент HRS LRS
- Date of publication
- 16.09.2025
- Year of publication
- 2025
- Number of purchasers
- 0
- Views
- 16
References
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- 7. Zhang Y., Mao G.Q., Zhao X. et al. Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging // Nat. Commun. 2021. V.12. P. 7232.
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