Methodology of Production of Photo-Sensitive Elements on Ptsi Basis

Kerimov, E. A.

doi:10.31857/S0544126924040053

English

Home>Issue number 4>Methodology of Production of Photo-Sensitive Elements on Ptsi Basis

Methodology of Production of Photo-Sensitive Elements on Ptsi Basis

Table of contents

Annotation Estimate Publication content

References Comments

Methodology of Production of Photo-Sensitive Elements on Ptsi Basis

Annotation

PII

S0544126924040053-1

Publication type

Article

Status

Published

Authors

E. A. Kerimov Send message

Affiliation: Azerbaijan State Technical University

Edition

Volume 53 Issue number 4

Pages

331-334

Abstract

Schottky barrier diodes based on PtSi-Si contact can be used as detectors for registration of radiation in the infrared spectral region. However, the quantum efficiency of such receivers is very low compared to photodetectors based on narrow-gap semiconductors and p-n junctions. To increase the quantum efficiency of Schottky receivers, as it will be shown below, they are made in the form of the so-called “optical cavity”, and the thickness of PtSi should not exceed 100 A⁰. For this purpose we have developed a technological mode of multilayer metallization to obtain thin PtSi-Si contacts.

Keywords

Шоттки — приемники технологический режим многослойная металлизации абсолютная шкала

Received

12.11.2024

Number of purchasers

Views

Readers community rating

0.0 (0 votes)

Cite Download pdf

GOST	Kerimov E. Methodology of Production of Photo-Sensitive Elements on Ptsi Basis // Russian Microelectronics. – 2024. – V. 53. – Issue number 4 C. 331-334 . URL: https://microelectronicsras.ru/s0544126924040053-1/?version_id=105591. DOI: 10.31857/S0544126924040053
MLA	Kerimov, E. A "Methodology of Production of Photo-Sensitive Elements on Ptsi Basis." Russian Microelectronics. 53.4 (2024).:331-334. DOI: 10.31857/S0544126924040053
APA	Kerimov E. (2024). Methodology of Production of Photo-Sensitive Elements on Ptsi Basis. Russian Microelectronics. vol. 53, no. 4, pp.331-334 DOI: 10.31857/S0544126924040053

References

1. Пул Ч., Оуэнс Ф. Нанотехнологии. — М.: Техносфера, 2010. 336 с.

2. Шапочкин М.Б. Статистическая физика / М.Б. Шапочкин. М.: Издат. дом Моск. Физ. о-ва, 2004. 85 с.

3. Гольдаде В.А., Пинчук Л.С. Физика конденсированного состояния. Белорусская наука, 2009. 648 с.

4. Парфенов В.В. Квантово-размерные структуры в электронике: оптоэлектроника. Казань: КГУ, 2007. 16 с.

5. Фролов В.Д. Размерный эффект в работе выхода электронов / В.Д. Фролов, С.М. Пименов, В.И. Конов, Е.Н. Лубнин // Российские нанотехнологии. 2008. Т. 3. С. 102.

6. Кудрик Я.Я., Шинкаренко В.В., Слепокуров В.С., Бигун Р.И., Кудрик Р.Я. Методы определения высоты барьера Шоттки из вольт-амперных характеристик // Оптоэлектроника и полупроводниковая техника, 2014. вып. 49. С. 21–28.

7. Шик А.Я., Бакуева Л.Г., Мусихин С.Ф., Рыков С.А. Физика низкоразмерных систем. — СПб.: Наука, 2001. 160 с.

Comments

No posts found

Write a review

Translate

References

Comments

Via social network