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Simulation of silicon conical field effect GAA nanotransistors with stack SiO2/HfO2 dielectric of gate
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Simulation of silicon conical field effect GAA nanotransistors with stack SiO2/HfO2 dielectric of gate
Annotation
PII
S0544126924030044-1
Publication type
Article
Status
Published
Authors
N. V. Masalsky 
Affiliation: Federal Research Center Scientific Research Institute for System Research, Russian Academy of Sciences Academy
Edition
Volume 53 Issue number 3
Pages
222-231
Abstract
The issues of modeling the electrophysical characteristics of a silicon conical field effect GAA nanotransistor are discussed. An analytical model of the drain current of a transistor with a fully enclosing conical gate with a stack sub-gate oxide SiO2/HfO2 has been developed, taking into account the effect of the charge of the interphase trap at the Si/SiO2 interface. To simulate the potential distribution in a conical working area under the condition of constant trap density, an analytical solution of the Poisson equation was obtained using the method of parabolic approximation in a cylindrical coordinate system with appropriate boundary conditions. The potential model was used to develop an expression for the GAA drain current of a nanotransistor with a stack gate oxide. The key electrophysical characteristics are numerically investigated depending on the density of traps and the thicknesses of SiO2 and HfO2 layers.
Keywords
кремневая нанотранзисторная архитектура полностью охватывающий затвор коническая рабочая область подзатворный стековый диэлектрик с высоким k моделирование
Acknowledgment
The publication was carried out within the framework of research at the Federal State University of the Federal Research Center of the Russian Academy of Sciences on the topic FNEF-2024-0003 “Methods for developing hardware and software platforms based on secure and fault-resistant systems on a chip and artificial intelligence and signal processing coprocessors”.
Received
27.10.2024
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