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Thermal modelling and layout optimization of GaN half-bridge IC with integrated drivers and power HEMTs
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Thermal modelling and layout optimization of GaN half-bridge IC with integrated drivers and power HEMTs
Annotation
PII
S0544126924030037-1
Publication type
Article
Status
Published
Authors
V. A. Kagadey 
Affiliation:
JSC NPP “Radar mms”
National research Tomsk State University
Edition
Volume 53 Issue number 3
Pages
212-221
Abstract
The paper presents the results of thermal modeling of a half-bridge monolithic integrated circuit (IC) with integrated drivers and enhanced mode power high electron mobility transistors, based on a GaN-on-SOI heterostructure. It had been established that the main heat sources in the IC were the half-bridge GaN HEMTs. The heat from the half-bridge GaN HEMTs propagates in the chip and leads to heating of the logic block and gate drivers. Heating of half-bridge GaN HEMTs leads to increased channel resistance and IC output current drop. Heating of the gate drivers reduces driving current, as a result, increases the switching time of the half-bridge GaN HEMTs. Heating of the logic block increases the rise and fall times of the generated control signals, which worsens the dynamic characteristics of the IC. A comparative analysis of heat propagation for IC dies based on GaN-on-SOI and GaN-on-Si heterostructures showed that GaN-on-SOI structure has a 40% greater junction-to-backside thermal resistivity compared to GaN-on-Si structure. In this case, the specific thermal resistance in the direction of heat propagation from the hotspot of the transistor to the backside of the die for the GaN-on-SOI structure is almost two orders of magnitude greater than in the direction of its propagation to the frontside of the chip. The results obtained were used for IC layout optimization. The rearrangement of GaN-on-SOI IC functional blocks, as well as to introduction of additional heat-spreading elements on the frontside of chip were carried out during the optimization.
Keywords
силовая GaN электроника GaN интегральная схема E-mode GaN-on-SOI HEMT тепловое моделирование топология интегральных схем
Acknowledgment
The study was carried out with financial support from the Federal State Budgetary Institution “Fund for Assistance to the Development of Small Forms of Enterprises in the Scientific and Technical field” under grant agreement No. 41 GUREK/72791 dated December 26, 2021.
Received
27.10.2024
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27
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References

1. Fichtenbaum N., Giandalia M., Sharma S., and Zhang J. Half-bridge GaN power ICs: Performance and application // IEEE Power Electronics Magazine. 2017. V. 4. Р. 33—40.

2. Roccaforte F., Fiorenza P., Greco G., Nigro R.L., Giannazzo F., Patti A., and Saggio M. Challenges for energy efficient wide band gap semiconductor power devices // Physical status solidi. 2014. V. 211. Р. 2063—2071.

3. Flack T.J., Pushpakaran B.N., and Bayne S.B. GaN technology for power electronic applications: a review // Journal of Electronic Materials. 2016. V. 45. Р. 2673—2682.

4. Li X., Van Hove M., Zhao M., Geens K. et al. 200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration // IEEE Electron Device Letters. 2017. V. 38. Р. 918—921.

5. Chen H.Y., Kao Y.Y., Zhang Z.Q. et al. A fully integrated GaN-on-silicon gate driver and GaN switch with temperature-compensated fast turn-on technique for improving reliability // 2021 IEEE International Solid-State Circuits Conference (ISSCC). 2021. V. 64. Р. 460—462.

6. Integrated Smart GaNs. Дата обращения: 05.05.2023. https://www.st.com/en/power-management/integrated-smart-gans.html

7. Jiang Q., Tang Z., Zhou C., Yang S., and Chen K.J. Substrate-coupled cross-talk effects on an AlGaN/GaN-on-Si smart power IC platform // IEEE Transactions on Electron Devices. 2014. V. 61. Р. 3808—3813.

8. Jones E.A., de Rooij M. High-power-density GaN-based converters: Thermal management considerations // IEEE Power Electronics Magazine. 2019. V. 6. Р. 22—29.

9. Chvála A., Szobolovszky R., Kovac J. et al. Advanced characterization techniques and analysis of thermal properties of AlGaN/GaN multifinger power HEMTs on SiC substrate supported by three-dimensional simulation // Journal of Electronic Packaging. 2019. V. 141. Р. 031007-7.

10. Moench S., Reiner R., Waltereit P. et al. A 600 V gan-on-si power ic with integrated gate driver, freewheeling diode, temperature and current sensors and auxiliary devices // CIPS 2020 11th International Conference on Integrated Power Electronics Systems. 2020. Р. 1—6.

11. Ma K., Ma K. Electro-thermal model of power semiconductors dedicated for both case and junction temperature estimation // Power electronics for the next generation wind turbine system. 2015. Р. 139—143.

12. Попескул А.Н. Теплотехника: методическое пособие, Тирасполь, 2016. 132 с.

13. Aygün D., Fossion M., Decoutere S. et al. A Monolithic 200 V GaN Half Bridge IC with Integrated Gate Drivers and Level-shifters Achieving 98.3% Peak Efficiency // 2022 IEEE Applied Power Electronics Conference and Exposition (APEC). 2022. Р. 2141—2145.

14. Magnani A., Cosnier T., Amirifar N. et al. Thermal characterization of GaN lateral power HEMTs on Si, SOI, and poly-AlN substrates // Microelectronics Reliability. 2021. V. 118. Р. 114061—114068. DOI: 10.1016/j.microrel.2021.114061.

15. Magnani A., Cosnier T., Amirifar N. et al. Thermal resistance characterization of GaN power HEMTs on Si, SOI, and poly-AlN substrates // 21st International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE). 2020. Р. 1—6. DOI: 10.1109/EuroSimE48426.2020.9152656.

16. Бартенев А.И., Кагадей В.А., Коряковцев А.С., Полынцев Е.С., Помазанов А.В., Проказина И.Ю., Шеерман Ф.И. Силовая GaN-электроника как фактор роста энергоэффективности преобразователей электрической энергии // Технологии безопасности жизнедеятельности. 2023. С. 91—100.

17. Polyntsev E.S., Prokazina I.Y., Bartenev A.I., Sogomonyants A.A., and Kagadey V.A. Development of Half-bridge IC with On-chip Drivers and Power e-HEMT Based on GaN-on-SOI Platform // 2022 International Siberian Conference on Control and Communications (SIBCON). 2022. Р. 1—4.

18. Li X., Van Hove M., Zhao М. et al. Suppression of the backgating effect of enhancement-mode p-GaN HEMTs on 200 mm GaN-on-SOI for monolithic integration // IEEE electron device letters. 2018. V. 39. Р. 999—1002.

19. Milanizadeh M., Aguiar D., Melloni A., and Morichetti F. Canceling thermal cross-talk effects in photonic integrated circuits // Journal of Lightwave Technology. 2019. V. 37. Р. 1325—1332.

20. Wong K.Y., Chen W., Chen K.J. Integrated voltage reference and comparator circuits for GaN smart power chip technology // 21st International Symposium on Power Semiconductor Devices & IC’s. 2009. Р. 57—60.

21. Бессонов Л.А. Теоретические основы электротехники. Электрические цепи. М.: ЮРАЙТ. 2002. 638 с.

22. Górecki K., Zarębski J., Górecki P., and Ptak P. Compact thermal models of semiconductor devices: A Review. International Journal of Electronics and Telecommunications. 2019. V. 65. Р. 151—158.

23. Chiu H.C., Peng L.Y., Yang C.W. et al. Analysis of the back-gate effect in normally OFF p-GaN gate high-electron mobility transistor // IEEE Transactions on Electron Devices. 2014. V. 62. Р. 507—511.

24. Mocanu M., Unger C., Pfost M., Waltereit P., and Reiner R. Thermal stability and failure mechanism of Schottky gate AlGaN/GaN HEMTs // IEEE Transactions on Electron Devices. 2017. V. 64. Р. 848—855.

25. Abdullah M.F., Hussin M.R.M., Ismail M.A., & Sabli S.K.W. Chip-level thermal management in GaN HEMT: Critical review on recent patents and inventions // Microelectronic Engineering. 2023. Р. 111958—111967.

26. Li X. Reliability and Integration of GaN Power Devices and Circuits on GaN-on-SOI, 2020.

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