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Structural features and electrical properties of si(al) thermal migration channels for high-voltage photovoltaic converters
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Structural features and electrical properties of si(al) thermal migration channels for high-voltage photovoltaic converters
Annotation
PII
S0544126924020018-1
Publication type
Article
Status
Published
Authors
A. A. Lomov 
Affiliation: Platov South Russian State Polytechnic Institute (NPI)
Edition
Volume 53 Issue number 2
Pages
119-131
Abstract
The results of a study of the structural features and electrical properties of Si(Al) through thermomigration p-channels in a silicon wafer are presented. Structural studies were performed using X-ray methods of projection topography, diffraction reflection curves and scanning electron microscopy. It is shown that the channel-matrix interface is coherent without the formation of mismatch dislocations. The possibility of using an array of thermomigration p-channels of 15 elements to form a monolithic photovoltaic solar module in a Si(111) silicon wafer based on p-channels with a width of 100 microns with walls in the plane is shown. The monolithic solar module has a conversion efficiency of 13.1%, an idle voltage of 8.5 V and a short-circuit current density of 33 mA/cm².
Keywords
термомиграция p—n-переход кремний алюминий рентгеновская топография дифракция кривая качания U—I—R-свойства высоковольтный солнечный модуль
Acknowledgment
The work was supported by the Ministry of Education and Science of the Russian Federation within the framework of the state assignment to the South-Russian State Polytechnical University (NPI) named after M.I. Platov on the topic FENN-2023-0005 and with partial support of the State assignment to the K.A. Valiev Institute of Physics and Technology of the Russian Academy of Sciences on the topic No. FFNN-2022-0019. Part of the experimental work was carried out with the instrumental support of the Center for Shared Use “Research of Nanostructured, Carbon and Superhard Materials” of the Federal State Budgetary Scientific Institution TISNCM.
Received
31.08.2024
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