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Research of Memristor Effect in Crossbar Architecture for Neuromorphic Artificial Intelligence Systems
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Research of Memristor Effect in Crossbar Architecture for Neuromorphic Artificial Intelligence Systems
Annotation
PII
S0544126924010069-1
Publication type
Article
Status
Published
Authors
V. V. Polyakova 
Affiliation: Southern Federal University
Edition
Volume 53 Issue number 1
Pages
58-63
Abstract
This article presents the results of experimental studies of structures formed on the basis of the crossbar architecture of memristor structures made of various materials. TiO2 was used as a working memristor layer. The following materials were used for the contact pads: Al, Ni, Cr, Mo, Ta, Ag. In the course of experimental studies, the optimal combination of materials for the formation of crossbar memristor structures was revealed, which in the future can be used in devices of neuromorphic artificial intelligence systems.
Keywords
мемристор кроссбар-архитектура нейроморфные системы магнетронное напыление атомно-силовая микроскопия
Acknowledgment
This work was performed within the framework of the project "Development and research of methods and means of monitoring, diagnostics and forecasting the state of engineering objects based on artificial intelligence" (task No. FENW-2020-0022). Magnetron sputtering was carried out at the expense of the Russian Science Foundation grant № 23-29-00827, https://rfcf.ru/project/23-29-00827/ at the Southern Federal University
Received
16.07.2024
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References

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