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Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter
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Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter
Annotation
PII
S0544126924010051-1
Publication type
Article
Status
Published
Authors
O. L. Golikov 
Affiliation: Lobachevsky Nizhny Novgorod State University
Edition
Volume 53 Issue number 1
Pages
51-57
Abstract
A set of transfer and output current-voltage characteristics of a bipolar transistor with a short-period superlattice in the emitter region has been calculated. It is shown that the presence of a superlattice in the tr ansistor structure leads to the fo rmation of a negative differential conductivity region, which makes it possible to implement not only amplification, but also the generation and multiplication of high-frequency oscillations.
Keywords
короткопериодная сверхрешетка отрицательная дифференциальная проводимость гетеробиполярный транзистор
Acknowledgment
This work was funded by the Ministry of Science and Higher Education of the Russian Federation as part of the state assignment of Lobachevsky Nizhny Novgorod State University (FSWR-2021-011)
Received
16.07.2024
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References

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