RAS Nano & ITМикроэлектроника Russian Microelectronics

• METHOD FOR AUTOMATED CALCULATION OF GRAINS AND VOIDS IN METAL FILMS AND TSV-STRUCTURES

  P.S. Ivanin
  193-201

• STRUCTURE OF THIN TITANIUM NITRIDE FILMS DEPOSITED BY MAGNETRON SPUTTERING

  A. G. Isaev
  202-212

• REINFORCEMENT LEARNING OF SPIKING NEURAL NETWORKS USING TRACE VARIABLES FOR SYNAPTIC WEIGHTS WITH MEMRISTIVE PLASTICITY

  V. A. Kulagin
  213-223

• STABILIZATION OF MEMRISTOR CELL STATES DURING INITIAL SWITCHING PROCESS AFTER FORMING

  A. V. Fadeev / K. V. Rudenko
  224-231

• FEATURES OF UPSETS FORMATION IN VLSI UNDER PULSED IONIZING RADIATION

  A.I. Chumakov
  232-240

• TEMPERATURE CHARACTERISTICS OF A SIMPLE CURRENT MIRROR ON SILICON HIGH-VOLTAGE nLDMOS WITH A LARGE DRIFT AREA

  A. S. Novoselov
  241-250

• NANOSTRUCTURED RUTHENIUM ETCHING IN THREE-COMPONENT Cl/O/Ar PLASMA

  I.I. Amirov
  251-260

• SELF-ASSEMBLY OF 3D MESOSTRUCTURES USING LOCAL ION-PLASMA TREATMENT

  A.S. Babushkin
  261-270