RAS Nano & ITМикроэлектроника Russian Microelectronics

• REGULARITIES OF X-RAY TRANSFER IN DOPED MULTICOMPONENT SEMICONDUCTORS FOR DOSIMETRY

  M. M. Asadov / V. F. Lukichev
  93-115

• MEASURING ADHESION ENERGY BETWEEN MEMS STRUCTURES USING AN ADHERED CANTILEVER

  I.V. Uvarov
  116-127

• MULTILEVEL SWITCHINGS IN MEMRISTIVE STRUCTURES BASED ON OXIDIZED LEAD SELENIDE

  N.A. Tulina
  128-138

• ELECTRICAL CHARACTERISTICS OF RUTHENIUM LINES WITH A CROSS-SECTIONAL AREA LESS THAN 1000 nm

  A. E. Rogozhin / A. E. Rogozhin
  139-151

• EFFECT OF BOUNDARY ROUGHNESS ON THE VARIABILITY OF THE I-V DATA OF SILICON FIELD-EFFECT GAA NANOTRANSISTORS

  N. V. Masalsky
  152-163

• FERROELECTRIC TRANSISTORS: OPERATING PRINCIPLES, MATERIALS, APPLICATIONS

  A.Yu. Reznyukov / K.A. Fetisenkova / A. E. Rogozhin
  164-181

• PRECISION ETCHING OF ALUMINUM CONDUCTORS IN THE TECHNOLOGY OF SWITCHING DEVICES OF MICROSYSTEMS TECHNOLOGY

  P.I. Didyk / A.A. Zhukov
  182-190