RAS Nano & ITМикроэлектроника Russian Microelectronics

• Investigation of double patterning method with the usage of antispacer

  E. D. Tikhonova / E. S. Gornev
  3-8

• Calculation of distributions of electron beam energy absorbed in PMMA and Si using various scattering models

  A. E. Rogozhin / F. A. Sidorov
  9-18

• Exposure kinetics of a positive photoresist layer on an optically matched substrate

  V. P. Kudrya
  19-25

• Influence of boundary conditions on transport in a quantum well

  D. N. Romanov
  26-33

• Formation of nickel-based composite magnetic nanostructures for microelectronics and nanodiagnostics devices

  A. I. Vorobyova / E. A. Outkina / A. A. Khodin
  34-54

• AZ nLOF series photoresist films on monocrystalline silicon

  V. S. Prosolovich / D. I. Brinkevich
  55-63

• Study of deposition modes of Cu₂O films by RF magnetron sputtering for application in solar cell structures

  A. V. Saenko
  64-75

• Development of atomic layer deposition technological platform for the synthesis of micro- and nanoelectronics materials

  R. R. Amashaev
  76-90