Issue 3
Volume:
53
Date of publication:
01.03.2024
Open access
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Микроэлектроника, Issue number 3
Issue publications 3
Pages
ДИАГНОСТИКА
A comprehensive study of nonuniformity properties of the LiCoO2 thin-film cathode fabricated by RF sputtering
Стр. 189-205
189-205
МОДЕЛИРОВАНИЕ
Influence of Hydrogen Additive on Electrophysical Parameters and Emission Spectra of Tetrafluoromethane Plasma
Стр. 206-211
206-211
ПАМЯТЬ
Thermal modelling and layout optimization of GaN half-bridge IC with integrated drivers and power HEMTs
Стр. 212-221
212-221
ПРИБОРЫ
Simulation of silicon conical field effect GAA nanotransistors with stack SiO2/HfO2 dielectric of gate
Стр. 222-231
222-231
232-242
243-258
259-264
Carrier Scattering Analysis in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier
Стр. 265-273
265-273
274-282