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RAS Nano & ITМикроэлектроника Russian Microelectronics

  • ISSN (Print) 0544-1269
  • ISSN (Online) 3034-5480
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Archive / Issue 2024, Volume 53, №2

ДИАГНОСТИКА
  • Structural features and electrical properties of si(al) thermal migration channels for high-voltage photovoltaic converters
    A. A. Lomov / B. M. Seredin / S. Yu. Martyushov / A. A. Tatarintsev / V. P. Popov / A. V. Malibashev
    119-131
МОДЕЛИРОВАНИЕ
  • Modeling the diffusion of atoms in multicomponent semiconductors in a disordered state
    S. M. Asadov
    132-141
  • Application of the finite element method for calculating the surface acoustic wave parameters and devices
    A. S. Koigerov
    142-155
  • The new approach of a simulation low dose rate radiation effects in bipolar integrated circuits
    A. I. Chumakov
    156-161
ТЕХНОЛОГИИ
  • Ripple of a DC/DC converter based on SEPIC topology
    V. K. Bityukov / A. I. Lavrenov
    162-168
  • Influence of nickel impurities on the operational parameters of a silicon solar cell
    Z. T. Kenzhaev / N. F. Zikrillaev / V. B. Odzhaev / K. A. Ismailov / V. S. Prosolovich / Kh. F. Zikrillaev / S. V. Koveshnikov
    169-178
  • Temporary changes in current flow mechanisms in erbium-doped porous silicon
    E. Kh. Khamzin / D. A. Uslin
    179-186
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