RAS Nano & ITМикроэлектроника Russian Microelectronics

• SEM Measurements of the Dimensions of Relief Structures in the Technological Process of Manufacturing Microcircuits

  Yu. A. Novikov / M. N. Filippov
  87-95

• Investigation of the Possibility of Optimizing the Interaction of NV Centers and Photons by Changing the Shape of Microresonators

  A. V. Tsukanov / I. Yu. Kateev
  96-109

• Cross Sections of Scattering Processes in Electron-Beam Lithography

  A. E. Rogozhin / F. A. Sidorov
  110-126

• Oxide Memristors for ReRAM: Approaches, Characteristics, and Structures

  A. G. Isaev / O. O. Permyakova / A. E. Rogozhin
  127-151

• Plasma Parameters and Kinetics of Reactive Ion Etching of SiO2 and Si3N4 in an HBr/Cl2/Ar Mixture

  A. M. Efremov / V. B. Betelin / K.-H. Kwon
  152-159

• Investigation of the Optical Properties of Ultrathin Films Based on Metal Silicide

  E. A. Kerimov
  160-164