- PII
- 10.31857/S0544126924030077-1
- DOI
- 10.31857/S0544126924030077
- Publication type
- Article
- Status
- Published
- Authors
- Volume/ Edition
- Volume 53 / Issue number 3
- Pages
- 259-264
- Abstract
- The conditions for the growth of n-type Ge conduction layers by the HW CVD method with the parameters required to create a Ge-TIR transistor with an induced p-type channel are determined. The conditions of deposition by electron beam deposition and subsequent annealing of layers of a high-k dielectric ZrO2:Y2O3 are optimized, allowing to achieve a leakage current of 5 × 10–6 A/cm2. For the developed instrument structure, some parameters of the Ge-TIR transistor were calculated, such as the channel length, the maximum voltage between the drain and the source, and the breakdown voltage.
- Keywords
- МДП-транзистор Ge/Si(001) HW CVD high-k диэлектрик
- Date of publication
- 16.09.2025
- Year of publication
- 2025
- Number of purchasers
- 0
- Views
- 110
References
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