RAS Nano & ITМикроэлектроника Russian Microelectronics

  • ISSN (Print) 0544-1269
  • ISSN (Online) 3034-5480

Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter

PII
10.31857/S0544126924010051-1
DOI
10.31857/S0544126924010051
Publication type
Article
Status
Published
Authors
Volume/ Edition
Volume 53 / Issue number 1
Pages
51-57
Abstract
A set of transfer and output current-voltage characteristics of a bipolar transistor with a short-period superlattice in the emitter region has been calculated. It is shown that the presence of a superlattice in the tr ansistor structure leads to the fo rmation of a negative differential conductivity region, which makes it possible to implement not only amplification, but also the generation and multiplication of high-frequency oscillations.
Keywords
короткопериодная сверхрешетка отрицательная дифференциальная проводимость гетеробиполярный транзистор
Date of publication
16.09.2025
Year of publication
2025
Number of purchasers
0
Views
90

References

  1. 1. Kholod A.N., Liniger M., Zaslavsky A., Arnaud d’Avitaya F. Cascaded resonant tunneling diode quantizer for analog-to-digital flash conversion // Appl. Phys. Lett., 79(1). 129 (2001).
  2. 2. Ourednik P., Feiginov M. Double-resonant-tunneling-diode patch-antenna oscillators // Appl. Phys. Lett., 120(18), 183501 (2022).
  3. 3. Reed M.A., Frensley W.R., Matyi R.J., Randall J.N., Seabaugh A.C. Realization of a three‐terminal resonant tunneling device: The bipolar quantum resonant tunneling transistor // Appl. Phys. Lett., 54(11), 1034 (1989).
  4. 4. Tsai J.H. Application of an AlGaAs/GaAs/InGaAs heterostructure emitter for a resonant-tunneling transistor // Appl. Phys. Lett., 75(17), 2668 (1999).
  5. 5. Попов В.Г. Полевой транзистор с двумерными системами носителей в затворе и канале // ФТП, 50(2), 236 (2016).
  6. 6. Liu W.C., Lour W.S. Modeling the DC Performance of Heterostructure-Emitter Bipolar Transistor // Appl. Phys. Lett., 70(1), 486 (1991).
  7. 7. Tsai J.H. Multiple negative differential resistance of InP/InGaAs superlattice-emitter resonant-tunneling bipolar transistor at room temperature // Appl. Phys. Lett., 83(13), 2695 (2003).
  8. 8. Tsai J.H., Huang C.H., Lour W.S., Chao Y.T., Ou-Yang, Jhou High-performance InGaP/GaAs superlattice — emitter bipolar transistor with multiple S-shaped negative-differential-resistance switches under inverted operation mode // Thin Solid Films, 521, 168 (2012).
  9. 9. Pavelyev D.G., Vasilev A.P., Kozlov V. A., Obolensky E.S., Obolensky S.V., Ustinov V.M. Increase of Self-Oscillation and Transformation Frequencies in THz Diodes // IEEE Transactions on Terahertz Science and Technology, 8(2), 231 (2018).
  10. 10. Sun J.P., Mains R.K., Yang K., Haddad G.I. A self‐consistent model of Γ‐X mixing in GaAs/AlAs/GaAs quantum well structures using the quantum transmitting boundary method // J. Appl. Phys., 74(8), 5053 (1993).
  11. 11. Ohnishi H., Inata T., Muto S., Yokoyama N., Shibatomi A. Self‐consistent analysis of resonant tunneling current // Appl. Phys. Lett., 49(19), 1248 (1986).
  12. 12. Cahay M., McLennan M., Datta S., Lundstrom M.S. Importance of space‐charge effects in resonant tunneling devices // Appl. Phys. Lett., 50(10), 612 (1987).
  13. 13. Кардона М.П.Ю. Основы физики полупроводников. М.: ФИЗМАТЛИТ, 2002. 560 с.
  14. 14. Зи С. Физика полупроводниковых приборов. М.: Мир, 1984. Кн. 1. 456 с.
QR
Translate

Индексирование

Scopus

Scopus

Scopus

Crossref

Scopus

Higher Attestation Commission

At the Ministry of Education and Science of the Russian Federation

Scopus

Scientific Electronic Library