- PII
- 10.31857/S0544126923700527-1
- DOI
- 10.31857/S0544126923700527
- Publication type
- Status
- Published
- Authors
- Volume/ Edition
- Volume 52 / Issue number 5
- Pages
- 367-373
- Abstract
- In order to study the strength reliability of interconnections, a generalized model for quantifying the effect of nonequilibrium point crystal defects on the value of the work of the reversible separation of joined materials along the boundary (interface) of their union, generalizing an approach proposed previously by the authors to the description of the mechanism of defect adsorption in the interface area. The developed model makes it possible not to be limited to the situation when the defects of each of the contacting materials are distributed independently in the boundary, over their sublattices, and the transitions of defects between these sublattices are also taken into account, which significantly expands the possibilities of applying the obtained theoretical results. The corresponding system of equations is formulated, which makes it possible to find and study the value of the work of reversible separation as a function of defect concentrations in the vol-umes of materials. In the case when the interstitial impurity atoms are the defects, the problem of the critical impurity concentrations at which the work of reversible separation vanishes and the bonding of the materials becomes thermodynamically unstable is studied in detail by analytical methods; the role of defect transitions between sublattices, in which defects are localized at the interface, is explained. Impurity concentrations are estimated at which the effect of the interface instability can be realized, significantly affecting the reliability characteristics of the interconnections.
- Keywords
- работа разделения интерфейс решеточные дефекты адсорбция химический потенциал
- Date of publication
- 16.09.2025
- Year of publication
- 2025
- Number of purchasers
- 0
- Views
- 17
References
- 1. Кинлок Э. Адгезия и адгезивы: наука и технология. М.: Мир, 1997. 441 с.
- 2. Гольдштейн Р.В., Махвиладзе Т.М., Сарычев М.Е. Влияние точечных дефектов на трещиностойкость границы соединенных материалов // Физическая мезомеханика. 2018. Т. 21. № 2. С. 14–20.
- 3. Гольдштейн Р.В., Махвиладзе Т.М., Сарычев М.Е. Влияние примесей на работу отрыва по границе соединенных материалов // Поверхность. 2009. № 12. С. 73–78.
- 4. Алексеев А.И., Махвиладзе Т.М., Минушев А.Х., Сарычев М.Е. Термодинамическая модель влияния атомарных примесей на адгезионную прочность интерфейсов // Микроэлектроника. 2011. Т. 40. № 5. С. 325–330.
- 5. Гольдштейн Р.В., Сарычев М.Е. О влиянии микродефектов на работу отрыва соединенных материалов // ДАН. 2003. Т. 389. № 6. С. 753–756.
- 6. Гольдштейн Р.В., Махвиладзе Т.М., Сарычев М.Е. Моделирование кинетики адсорбции решеточных дефектов границей соединенных материалов // Поверхность. 2011. № 8. С. 5–11.
- 7. Rice J.R. Hydrogen and interfacial cohesion // Effect of hydrogen on behavior of materials / Ed. A.W. Thompson and I.M.Bernstein. N. Y.: The metallurgical society of AIME, 1976. P. 455–466.
- 8. Хирш Дж., Лоте И. Теория дислокаций. М.: Атомиздат, 1972. 600 с.
- 9. Махвиладзе Т.М., Сарычев М.Е. Влияние точечных дефектов на скорость электромиграции по границе соединенных материалов // Микроэлектроника. 2020. Т. 49. № 6. С. 450–458.
- 10. Бабичев А.П., Бабушкина И.А., Братковский А.М. и др. Физические величины: Справочник. М.: Энергоиздат, 1991. 880 с.
