- PII
- 10.31857/S0544126923700382-1
- DOI
- 10.31857/S0544126923700382
- Publication type
- Status
- Published
- Authors
- Volume/ Edition
- Volume 52 / Issue number 4
- Pages
- 315-321
- Abstract
- Pulse studies of transients in the effect of resistive switching in planar heterocontacts based on strongly correlated electronic systems are presented using the example of memristive transitions based on YBa2Cu3O7–δ. It is shown that the switching process is asymmetric with respect to switching to low-resistance and high-resistance metastable states; and switching times are regulated by the voltage level and can be less than microseconds; however, relaxation processes last several seconds. The ability to adjust switching times characterizes the plasticity of these devices as memory elements for neuromorphic applications. in spike neu-ral networks.
- Keywords
- интерфейсные структуры гетероструктуры мемристор резистивные переключения пленки вакансии
- Date of publication
- 16.09.2025
- Year of publication
- 2025
- Number of purchasers
- 0
- Views
- 21
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