- PII
- 10.31857/S0544126923700357-1
- DOI
- 10.31857/S0544126923700357
- Publication type
- Status
- Published
- Authors
- Volume/ Edition
- Volume 52 / Issue number 3
- Pages
- 200-206
- Abstract
- This paper studies the design of a nonlinear model of AlGaAs/InGaAs/GaAs рHEMT micro-wave-frequency range transistors with a gate length of 0.15 μm using parametric analysis methods. In the cal-culations, not only nonlinear current sources but also the dependences of the nonlinear gate-source and gate-drain capacitances on voltages are studied. It is shown that the proposed model makes it possible to describe the IV characteristics of the studied device adequately in the range of drain currents from 0 to 100 mA and the frequency range from 5 to 45 GHz. The error of the model does not exceed 3%
- Keywords
- транзистор с высокой подвижностью электронов сверхвысокий диапазон частот библиотека элементов AlGaAs/InGaAs/GaAs гетероструктура pHEMT
- Date of publication
- 16.09.2025
- Year of publication
- 2025
- Number of purchasers
- 0
- Views
- 16
References
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