- PII
- S0544126925030076-1
- DOI
- 10.31857/S0544126925030076
- Publication type
- Article
- Status
- Published
- Authors
- Volume/ Edition
- Volume 54 / Issue number 3
- Pages
- 251-260
- Abstract
- Using spectral and probe diagnostic methods for the radical composition and electronic component of the removed plasma of an RF discharge in a mixture of 50%Ar/Cl/O, low-energy (E ~80 eV) etching of a nanometer-thick Ru film was studied depending on pressure, RF power, and relative content of Cl/O. With a 10–30 percent chlorine content in the plasma, a wide maximum of the Ru etching rate is observed. In a plasma of this composition, using an array of amorphous silicon nanocones as a mask, vertical nanocolumned Ru structures with a height of 35 nm and a distance between them of 10–20 nm were obtained. The mechanism of Ru etching in plasma of 50%Ar/Cl/O is discussed.
- Keywords
- рутений травление хлор–кислородсодержащая плазма скорость диагностика ионы энергия ионов наноструктуры
- Date of publication
- 16.09.2025
- Year of publication
- 2025
- Number of purchasers
- 0
- Views
- 23
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