RAS Nano & ITМикроэлектроника Russian Microelectronics

  • ISSN (Print) 0544-1269
  • ISSN (Online) 3034-5480

TEMPERATURE CHARACTERISTICS OF A SIMPLE CURRENT MIRROR ON SILICON HIGH-VOLTAGE nLDMOS WITH A LARGE DRIFT AREA

PII
S0544126925030069-1
DOI
10.31857/S0544126925030069
Publication type
Article
Status
Published
Authors
Volume/ Edition
Volume 54 / Issue number 3
Pages
241-250
Abstract
The results of a study of the temperature characteristics of a simple current mirror on high-voltage SOI nLDMOS transistors with a large drift area with topological norms of 0.5 microns in an extended range of external temperatures are discussed. The characteristics of a simple current mirror at temperatures of −60, 25, 125 °C have been experimentally studied. A mathematical model of a high-voltage nLDMOS transistor with a large DRIFT region has been developed for static operation in the field of high drain voltages and a wide range of ambient temperatures. Based on the results of experimental and numerical studies, a temperature range has been established in which the transfer characteristic of the current mirror retains linearity. It is 300 °C from −110 to 190 °C in the control voltage range from 25 to 55 V. In the same temperature range, the transmission coefficient (specularity) depends linearly on the input current level. Based on the data obtained, the conditions for determining the SOA of a simple current mirror on SOI LDMOS transistors are formulated.
Keywords
технология "кремний на изоляторе" мощный LDMOS токовое зеркало температурная зависимость тестирование моделирование
Date of publication
16.09.2025
Year of publication
2025
Number of purchasers
0
Views
21

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