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RAS Nano & ITМикроэлектроника Russian Microelectronics

  • ISSN (Print) 0544-1269
  • ISSN (Online) 3034-5480

REGULARITIES OF X-RAY TRANSFER IN DOPED MULTICOMPONENT SEMICONDUCTORS FOR DOSIMETRY

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PII
S0544126925020016-1
DOI
10.31857/S0544126925020016
Publication type
Article
Status
Published
Authors
M. M. Asadov
  • Affiliation:
    Scientific Research Institute “Geotechnological Problems of Oil, Gas, and Chemistry” Ministry of Science and Education of Azerbaijan
    Nagiyev Institute of Catalysis and Inorganic Chemistry, Ministry of Science and Education of Azerbaijan
    Azerbaijan State Oi
V. F. Lukichev
  • Affiliation: Institute of Physics, Ministry of Science and Education of Azerbaijan
Volume/ Edition
Volume 54 / Issue number 2
Pages
93-115
Abstract
Sensitivity control of semiconductors often requires changing their crystal and electronic structure, which can lead to the loss of their initial semiconductor properties. Chalcogenide semiconductors have high carrier transport properties. However, they face limitations in detecting hard X-rays due to various reasons, in particular, their defective structure and poor X-ray sensitivity. The basic laws of the theory of X-ray conductivity of semiconductors are generalized and simplified taking into account their areas of application. The features of the influence of doping on X-ray sensitivity, determination of the optimal concentration of the dopant, using the example of Cr-doping of chalcogenides, as well as the principle of creating an X-ray detector are considered. As an example of an important X-ray sensitive material, our results on the study of photo- and X-ray conductivity in the layered compound with a monoclinic p-type structure TlGaS containing a doped chromium impurity are presented. Our experimental results of the study of synthesized and grown single crystals of chromium-doped ( 0.5 mol. % Cr) TlGaS:Cr are presented. It is shown that TlGaS:Cr-based materials retain semiconductor properties and are characterized by high electrical transport. Chromium doping increases photosensitivity and polarization between metal and chalcogenide ions in TlGaS:Cr. The doping of Cr impurity on the photoconductivity and band gap of the layered TlGaS single crystal was studied. The change in the spectral sensitivity region of TlGaS:Cr and the appearance of impurity photocurrent peaks in the photon energy region were analyzed. The X-ray dosimetric properties of TlGaS:Cr were studied depending on the irradiation doses. Using TlGaCrS as an example, it was shown that the volt-dose characteristics have good reproducibility. The single crystal detector sample TlGaCrS also demonstrated high photo- and X-ray sensitivity compared to pure TlGaS. The obtained new photoelectric and X-ray dosimetric properties and results show the potential of TlGaS:Cr semiconductor for optoelectronic and radiation technologies.
Keywords
законы переноса рентгеновских лучей в твердых телах Cr-легированный слоистый кристалл TlGaS полупроводниковый детектор излучения неохлаждаемый детектор рентгеновского излучения рентгеновская спектроскопия малошумящая электроника
Date of publication
18.04.2025
Year of publication
2025
Number of purchasers
0
Views
19

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