- PII
- S0544126925010088-1
- DOI
- 10.31857/S0544126925010088
- Publication type
- Article
- Status
- Published
- Authors
- Volume/ Edition
- Volume 54 / Issue number 1
- Pages
- 76-90
- Abstract
- This work presents the results of designing, constructing and testing the atomic layer deposition (ALD) platform for the synthesis of various semiconductor, dielectric, metallized and barrier thin-film structures with a thickness of < 100 nm. This ALD platform can be used in the field of micro- and nanoelectronics, with the possibility of in situ monitoring of mass and thickness growth processes with an accuracy of 0.3 ng/cm2 and 0.037 Å/cycle, respectively. In this ALD platform, the number of imported components is minimized due to the use of electronics and vacuum fittings from domestic manufacturers, which in turn will significantly reduce the cost of this type of installation and make atomic layer deposition technology available to most scientific and educational organizations in Russia.
- Keywords
- атомно-слоевое осаждение молекулярно-слоевое осаждение молекулярное наслаивание тонкие пленки нанотехнологии вакуумное оборудование
- Date of publication
- 16.09.2025
- Year of publication
- 2025
- Number of purchasers
- 0
- Views
- 19
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