- PII
- 10.31857/S0544126923600227-1
- DOI
- 10.31857/S0544126923600227
- Publication type
- Status
- Published
- Authors
- Volume/ Edition
- Volume 52 / Issue number 6
- Pages
- 459-468
- Abstract
- A design-topological solution for a tunnel field-effect transistor of a new type is proposed and the simulation of the transistor is performed. The device is a vertical ballistic field-effect transistor with a cylindrical metallic gate based on a cylindrical undoped AlxGa1–xAs quantum nanowire located in an Al2O3 matrix. For a given geometry of the device structure, the optimum of the fraction of aluminum in the semiconductor composition varying along the transistor channel is found, at which, unlike a conventional tunnel field-effect transistor, not only the complete suppression of the quantum barrier for electrons by a positive gate voltage is ensured, but also the minimum possible electrical resistance of the transistor channel. The current-voltage characteristics of the transistor are calculated within the framework of a rigorous quantum-mechanical description of the electron transport in its channel, taking into account the non-parabolic nature of the band structure of the semiconductor.
- Keywords
- вертикальный полевой транзистор полупроводниковая квантовая нанопроволока баллистический перенос электронов
- Date of publication
- 16.09.2025
- Year of publication
- 2025
- Number of purchasers
- 0
- Views
- 18
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